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| Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon-PIN-Photodiode with Daylight Filter SFH 204 F SFH 204 FA Area not flat Chip position 5.1 4.7 2.54 mm spacing 0.6 0.4 0.8 0.4 1.8 1.2 Cathode (3.8) 34 32 6.3 5.7 GEO06964 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen bei 880 nm q Kurze Schaltzeit (typ. 20 ns) q 5 mm-Plastikbauform im LED-Gehause q Auch gegurtet lieferbar Anwendungen q IR-Fernsteuerung von Fernseh- und 0.5 0.3 Features q Especially suitable for applications of 880 nm q Short switching time (typ. 20 ns) q 5 mm LED plastic package q Also available on tape Applications q IR-remote control of hi-fi and TV sets, video tape recorders, dimmers, remote control of various equipment q Photointerrupters Rundfunkgeraten, Videorecordern, Lichtdimmern, Geratefernsteuerungen q Lichtschranken fur Gleich- und Wechsellichtbetrieb Typ Type SFH 204 F SFH 204 FA Bestellnummer Ordering Code Q62702-P5052 Q62702-P1793 Semiconductor Group 1 5.3 4.9 1998-11-12 SFH 204 F SFH 204 FA Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Symbol Symbol SFH 204 F = 950 nm Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Ee = 1 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip surface to case surface Halbwinkel horizontal Half angle horizontal plane Wert Value SFH 204 FA = 870 nm 52 ( 43) A Einheit Unit Symbol Symbol Wert Value - 55 ... + 100 230 Einheit Unit C C Top; Tstg TS VR Ptot 20 150 V mW S 52 ( 43) S max 920 780 ... 1120 900 740 ... 1120 nm nm A LxB LxW H 4.84 2.20 x 2.20 4.84 2.20 x 2.20 mm2 mm x mm 1.9 ... 2.4 1.9 ... 2.4 mm 60 60 Grad deg. Semiconductor Group 2 1998-11-12 SFH 204 F SFH 204 FA Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Description Symbol Symbol SFH 204 F = 950 nm Halbwinkel vertikal Half angle vertical plane Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity Quantenausbeute Quantum yield Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage Kurzschlustrom, Ee = 0.5 mW/cm2 Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V Nachweisgrenze, VR = 10 V Detection limit + 60 - 75 2 (< 30) 0.59 0.77 340 (> 270) 25 20 Wert Value SFH 204 FA = 870 nm + 60 - 75 2 (< 30) 0.63 0.90 340 (> 270) 25 20 Grad deg. nA A/W Electrons Photons mV A ns Einheit Unit IR S VO ISC tr, tf VF C0 TCV TCI NEP 1.3 48 - 2.6 0.18 3.6 x 1014 1.3 48 - 2.6 0.1 3.6 x 1014 V pF mV/K %/K W ----------Hz cm x Hz ------------------------W D* 6.1 x 1012 6.1 x 1012 Semiconductor Group 3 1998-11-12 SFH 204 F SFH 204 FA Relative spectral sensitivity SFH 204 F Srel = f () Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) Dark current IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 R nA 10 2 10 1 10 0 10 -1 0 20 40 60 80 C 100 TA Relative spectral sensitivity SFH 204 FA Srel = f () 100 OHF01430 Capacitance C = f (VR), f = 1 MHz, E = 0 Srel % 80 70 60 50 40 30 20 10 0 400 600 800 1000 nm 1200 Dark current IR = f (VR), E = 0 4000 OHF00080 Total power dissipation Ptot = f (TA) 160 mW Ptot 140 120 100 OHF00394 R pA 3000 2000 80 60 1000 40 20 0 0 5 10 15 V VR 20 0 0 20 40 60 80 C 100 TA Semiconductor Group 4 1998-11-12 SFH 204 F SFH 204 FA Directional characteristics - horizontal plane Srel = f () 40 30 20 10 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Directional characteristics - vertical plane Srel = f () Semiconductor Group 5 1998-11-12 |
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